PRODUCT DESCRIPTION:
IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
FEATURES:
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
DETAILED SPECIFICATIONS:
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Drain-Source Breakdown Voltage (Vds)
55V
Continuous Drain Current (Id)
49A
Drain-Source Resistance (Rds On)
0.0175Ohms
Gate-Source Voltage (Vgs)
20V
Gate Charge (Qg)
63 nC
Operating Temperature Range
-55 - 175°C
Power Dissipation (Pd)
94W