Description:
4N35 Optocoupler Phototransistor IC is an infrared emitter diode that drives a phototransistor. They are also known as optoisolators since they separate two circuits optically. The 4N35 optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
These are used to couple two circuits without any ohmic contact. They allow one of the circuits to switch to another one while they are completely separate. The first circuit is connected to the IR diode while the other circuit with the phototransistor. The isolation ensures that no damage occurs in either of the circuits while the other one has a fault.
Features:
Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon NPN Photo-transistor
High Direct-Current Transfer Ratio
High-Voltage Electrical Isolation 1.5-kV, 2.5-kV, or 3.55-kV Rating
High-Speed Switching tr = 7 µs, tf = 7 µs Typical
Input-to-output peak voltage (8-ms half sine wave)4N35= 3.55 kV
Input-to-output root-mean-square voltage (8-ms half sine wave)4N35= 2.5 kV
Collector-base voltage=70 V
Collector-emitter voltage=30 V
Emitter-base voltage=7 V
Input-diode reverse voltage=6 V
Input-diode forward current: Continuous 60 mA
Typical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers
Specifications:
Symbol
Parameter
Value
Unit
VR
Reverse voltage
6
V
IF
Forward current
60
mA
IFSM
Surge current
2.5
A
Pdiss
Power dissipation
100
mW
VCEO
Collector-emitter breakdown voltage
70
V
VEBO
Emitter-base breakdown voltage
7
V
IC
Collector current
100
mA
Applications:
AC mains detection
Reed relay driving
Switch-mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high-frequency noise rejection
Package Includes:
4 x 4N35 Optocoupler IC